A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique

Electrochemical processes and device improvement in conductive bridge RAM cells

(2015) Ludovic Goux et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

(2015) Fun-Tat Chin et al.   SOLID-STATE ELECTRONICS

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

(2014) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

(2014) Fun-Tat Chin et al.   Nanoscale Research Letters

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Novel Ion Bombardment Technique for Doping Limited Cu Source in ${\rm SiO}_{x}$-Based Nonvolatile Switching Layer

(2013) Sheng-Hsien Liu et al.   IEEE ELECTRON DEVICE LETTERS

Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells

(2013) Deok-Yong Cho et al.   Nanoscale

Switching kinetics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Improved Switching Variability and Stability by Activating a Single Conductive Filament

(2012) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

(2012) Stefan Tappertzhofen et al.   Nanoscale

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

(2011) Jiun-Jia Huang et al.   IEEE ELECTRON DEVICE LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Investigation of State Stability of Low-Resistance State in Resistive Memory

(2010) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

(2009) Yingtao Li et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today