Modeling polarization effects on internal quantum efficiency of micro-LEDs at low current density
Published 2023 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Modeling polarization effects on internal quantum efficiency of micro-LEDs at low current density
Authors
Keywords
-
Journal
AIP Advances
Volume 13, Issue 11, Pages -
Publisher
AIP Publishing
Online
2023-11-07
DOI
10.1063/5.0166244
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon
- (2022) Sourav Roy et al. Materials Today Communications
- Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers
- (2020) Hongjian Li et al. Applied Physics Reviews
- A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications
- (2019) Xiantao Jia et al. Materials Research Express
- Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
- (2018) Yuji Zhao et al. Advances in Optics and Photonics
- Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure
- (2017) Rabia Saroosh et al. IET Optoelectronics
- Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems
- (2015) S. Schulz et al. Physical Review Applied
- High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
- (2014) Daniel L. Becerra et al. APPLIED PHYSICS LETTERS
- A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation
- (2013) Seweryn Morawiec et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Efficiency droop in light-emitting diodes: Challenges and countermeasures
- (2013) Jaehee Cho et al. Laser & Photonics Reviews
- Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
- (2013) Miguel A. Caro et al. PHYSICAL REVIEW B
- Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
- (2012) Yoshinobu Kawaguchi et al. APPLIED PHYSICS LETTERS
- Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
- (2012) F. Akyol et al. APPLIED PHYSICS LETTERS
- Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
- (2012) M. A. Caro et al. PHYSICAL REVIEW B
- Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices
- (2011) M. G. Ancona Journal of Computational Electronics
- When group-III nitrides go infrared: New properties and perspectives
- (2009) Junqiao Wu JOURNAL OF APPLIED PHYSICS
- The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells
- (2008) S Khatsevich et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
- (2008) Patrick Rinke et al. PHYSICAL REVIEW B
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started