Modeling polarization effects on internal quantum efficiency of micro-LEDs at low current density

Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon

(2022) Sourav Roy et al.   Materials Today Communications

Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers

(2020) Hongjian Li et al.   Applied Physics Reviews

A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications

(2019) Xiantao Jia et al.   Materials Research Express

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

(2018) Yuji Zhao et al.   Advances in Optics and Photonics

Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure

(2017) Rabia Saroosh et al.   IET Optoelectronics

Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems

(2015) S. Schulz et al.   Physical Review Applied

High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design

(2014) Daniel L. Becerra et al.   APPLIED PHYSICS LETTERS

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

(2013) Seweryn Morawiec et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

(2013) Miguel A. Caro et al.   PHYSICAL REVIEW B

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

(2012) Yoshinobu Kawaguchi et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides

(2012) M. A. Caro et al.   PHYSICAL REVIEW B

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

(2011) M. G. Ancona   Journal of Computational Electronics

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells

(2008) S Khatsevich et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B