The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells

Published 2008 View Full Article

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Title
The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 20, Issue 21, Pages 215223
Publisher
IOP Publishing
Online
2008-04-25
DOI
10.1088/0953-8984/20/21/215223

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