A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

Group III-nitride lasers: a materials perspective

(2011) Matthew T. Hardy et al.   Materials Today

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2010) Takashi Kyono et al.   Applied Physics Express

Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

(2010) M. V. Durnev et al.   APPLIED PHYSICS LETTERS

In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation

(2010) Q. Y. Wei et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Semi-polar nitride surfaces and heterostructures

(2010) André Strittmatter et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

(2009) Hisashi Masui et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures

(2009) Hisashi Masui et al.   JOURNAL OF ELECTRONIC MATERIALS