Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier

GaN-Based VCSELs with A Monolithic Curved Mirror: Challenges and Prospects

(2023) Tatsushi Hamaguchi   Photonics

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

(2022) Lei Han et al.   Chinese Optics Letters

Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer

(2022) Fengyi Zhao et al.   AIP Advances

Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers

(2021) Chia-Yen Huang et al.   Micromachines

On the Origin for the Hole Confinement into Apertures for GaN-based VCSELs with Buried Dielectric Insulators

(2020) Zi Hui Zhang et al.   OPTICS EXPRESS

Green VCSELs based on nitride semiconductors

(2020) Huan Xu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers

(2020) Xuejiao Qiu et al.   OPTICS EXPRESS

Vertical-cavity surface-emitting lasers for data communication and sensing

(2019) Anjin Liu et al.   Photonics Research

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer

(2019) Longfei He et al.   Applied Physics Express

Progress and prospects of GaN-based VCSEL from near UV to green emission

(2018) Hsin-chieh Yu et al.   PROGRESS IN QUANTUM ELECTRONICS

Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

(2018) Robert Oliva et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers

(2016) Guoen Weng et al.   OPTICS EXPRESS

Motility-Driven Glass and Jamming Transitions in Biological Tissues

(2016) Dapeng Bi et al.   Physical Review X

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

(2015) D. H. Hsieh et al.   OPTICS EXPRESS

Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer

(2014) B C Lin et al.   LASER PHYSICS LETTERS

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

(2012) Roy B. Chung et al.   APPLIED PHYSICS LETTERS

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

(2011) Yun Yan Zhang et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier

(2010) Sheng-Horng Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING