Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab22df
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Funding
- National Key R&D Program of China [2016YFB0400103]
- National Natural Science Foundation of China [61804034, 61874161]
- Natural Science Foundation of Guangdong Province [2018A0303130334]
- Science and Technology Program of Guangdong [2014TQ01C707, 2017B010112002, 2017B010127001]
- Education Department project Foundation Program of Guangdong [2017KZDXM002]
- GDAS' Project of Science and Technology Development [2019GDASYL-0105060, 2018GDASCX-0952, 2018GDASCX-0112, 2017GDASCX-0410]
- Innovation Project of Graduate School of South China Normal University [2018LKXM015]
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The advantages of using an AlxGa1-xN carrier reservoir layer (CRL) instead of the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. The results indicate that the internal quantum efficiency is markedly enhanced and the efficiency droop phenomenon is alleviated. These improvements are mainly attributed to the significantly enhanced hole-injection and radiative recombination rate. Additionally, when the Al contents of the CRL gradually decrease to that of the quantum wells, a large number of electrons and holes are reserved in the CRL region and recombined to emit DUV light, leading to marked enhancement of the optical performance. (C) 2019 The Japan Society of Applied Physics
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