Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability

Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT

(2021) Jun Tae Jang et al.   IEEE ELECTRON DEVICE LETTERS

In-Situ Investigation of the Gate Bias Instability of Tungsten-Doped Indium Zinc Oxide Thin Film Transistor by Simultaneous Ultraviolet and Thermal Treatment

(2021) Min Jung Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Insulators for 2D nanoelectronics: the gap to bridge

(2020) Yury Yu. Illarionov et al.   Nature Communications

Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel

(2020) Hirokazu Fujiwara et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low Thermal Budget (

(2020) Wriddhi Chakraborty et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

(2020) Mengwei Si et al.   NANO LETTERS

Nanometre-thin indium tin oxide for advanced high-performance electronics

(2019) Shengman Li et al.   NATURE MATERIALS

Low temperature solution-processed IGZO thin-film transistors

(2018) Wangying Xu et al.   APPLIED SURFACE SCIENCE

Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping

(2018) Kyung Park et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs

(2017) Alwin Daus et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

(2017) Jae Kwon Jeon et al.   AIP Advances

Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

(2016) Alwin Daus et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide semiconductor thin-film transistors for flexible electronics

(2016) Luisa Petti et al.   Applied Physics Reviews

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

(2015) Josephine Socratous et al.   ADVANCED FUNCTIONAL MATERIALS

Generic origin of subgap states in transparent amorphous semiconductor oxides illustrated for the cases of In-Zn-O and In-Sn-O

(2015) Wolfgang Körner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

(2014) Takio Kizu et al.   APPLIED PHYSICS LETTERS

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

(2014) Shanmugam Parthiban et al.   JOURNAL OF MATERIALS RESEARCH

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3films

(2013) Natalie Preissler et al.   PHYSICAL REVIEW B

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses

(2008) In-Tak Cho et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY