Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Title
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
Authors
Keywords
-
Journal
NANO LETTERS
Volume 21, Issue 1, Pages 500-506
Publisher
American Chemical Society (ACS)
Online
2020-12-29
DOI
10.1021/acs.nanolett.0c03967

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