High-V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering
Published 2023 View Full Article
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Title
High-V
TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V
TH Stability Enabled by Mg-Doped p-GaN Engineering
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 70, Issue 11, Pages 5596-5602
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2023-10-10
DOI
10.1109/ted.2023.3315252
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