Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Published 2019 View Full Article

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Title
Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 4, Pages 518-521
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-02-07
DOI
10.1109/led.2019.2897911

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