p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Title
p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 5, Pages 2282-2286
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2022-03-18
DOI
10.1109/ted.2022.3157569

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