PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Authors

Keywords

Journal

Volume 65, Issue 1, Pages 38-44

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2017-11-18

DOI

10.1109/ted.2017.2769167

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started