Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

(2022) Lifang Hu et al.   PHYSICA B-CONDENSED MATTER

Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures

(2022) S.P. Swathi et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption

(2021) Jinshi Zhao et al.   APPLIED PHYSICS LETTERS

The effect of graphene and reduced graphene oxide in the resistive switching behavior of La0.7Ba0.3MnO3

(2021) Karuna Kumari et al.   Materials Today Communications

Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications

(2021) Jinsu Jung et al.   APPLIED PHYSICS LETTERS

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

(2021) Xinna Yu et al.   APPLIED PHYSICS LETTERS

Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots

(2021) Shuxia Ren et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Improved uniformity in resistive switching behaviors based on PMMA films with embedded carbon quantum dots

(2021) Liye Li et al.   APPLIED PHYSICS LETTERS

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

(2021) Pradeep Kumar et al.   NANOTECHNOLOGY

Effect of UV irradiation on the resistive switching characteristics of low-temperature solution-processed ZrO2 RRAM

(2021) Yubin Lee et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Coexistence of volatile and non-volatile resistive switching in Ni/SiO2/Pt memristor device controlled from different current compliances

(2021) Mehr Khalid Rahmani et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bipolar resistive switching and memristive properties of sprayed deposited Bi2WO6 thin films

(2021) Amitkumar R. Patil et al.   Materials Today Communications

Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process

(2021) Ansh et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications

(2021) Rakesh Singh et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structure for neuromorphic systems

(2021) Meng Qi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Insights into Multilevel Resistive Switching in Monolayer MoS2

(2020) Shubhadeep Bhattacharjee et al.   ACS Applied Materials & Interfaces

Oxide 2D electron gases as a reservoir of defects for resistive switching

(2020) Dror Miron et al.   APPLIED PHYSICS LETTERS

Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

(2020) M. Brzhezinskaya et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistive switching kinetics and second-order effects in parylene-based memristors

(2020) Anna N. Matsukatova et al.   APPLIED PHYSICS LETTERS

Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices

(2020) Ziliang Zhou et al.   APPLIED PHYSICS LETTERS

Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement

(2020) Ange Liang et al.   NANOTECHNOLOGY

Multiple nano-filaments based efficient resistive switching in TiO2 nanotubes array influenced by thermally induced self-doping and anatase to rutile phase transformation

(2020) Arnab Hazra et al.   NANOTECHNOLOGY

Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

(2019) Muhammad Ismail et al.   APPLIED PHYSICS LETTERS

Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory

(2019) Yang Sun et al.   NANOTECHNOLOGY

Resistive switching biodevice composed of MoS2-DNA heterolayer on the gold electrode

(2019) Jinho Yoon et al.   APPLIED SURFACE SCIENCE

Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing

(2019) Xiaoning Zhao et al.   APPLIED PHYSICS LETTERS

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

(2019) Lifang Hu et al.   NANOTECHNOLOGY

UV-Induced Multilevel Current Amplification Memory Effect in Zinc Oxide Rods Resistive Switching Devices

(2018) Paola Russo et al.   ADVANCED FUNCTIONAL MATERIALS

An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor

(2018) Shuai Chen et al.   ADVANCED MATERIALS

Resistive switching characteristics of Ag/MnO/CeO 2 /Pt heterostructures memory devices

(2018) Quanli Hu et al.   MICROELECTRONIC ENGINEERING

A graphene integrated highly transparent resistive switching memory device

(2018) Sita Dugu et al.   APL Materials

Resistive switching characteristics of graphene/NiO/highly ordered pyrolytic graphite resistive random access memory capacitors

(2018) Hyun Wook Shin et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure

(2018) Shuai Xie et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Annealing effect on the bipolar resistive switching memory of NiZn ferrite films

(2018) Lei Wu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol–gel method with forming-free operation

(2017) Wen-Yi Jian et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Mechanism for an enhanced resistive switching effect of bilayer NiO x /TiO 2 for resistive random access memory

(2017) Guangdong Zhou et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Bipolar resistive switching behavior in Cu/AlN/Pt structure for ReRAM application

(2017) Ravi Prakash et al.   VACUUM

Graphene-HfO2-based resistive RAM memories

(2016) Cédric Mannequin et al.   MICROELECTRONIC ENGINEERING

Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

(2015) Cheng-Li Lin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

(2015) Xing Long Shao et al.   Nanoscale

Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

(2012) Juqing Liu et al.   ADVANCED MATERIALS

Hydrothermal Synthesis of Graphene-TiO2 Nanotube Composites with Enhanced Photocatalytic Activity

(2012) Sanjaya D. Perera et al.   ACS Catalysis

Growth and characterization of ZnO/ZnTe core/shell nanowire arrays on transparent conducting oxide glass substrates

(2012) YuWei Lin et al.   Nanoscale Research Letters

Reversible Electrical Reduction and Oxidation of Graphene Oxide

(2011) Okan Öner Ekiz et al.   ACS Nano

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

(2011) Hu Young Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

(2010) Hu Young Jeong et al.   NANO LETTERS

Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

(2010) Zhenguo Ji et al.   SOLID STATE COMMUNICATIONS