Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

Published 2010 View Full Article

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Title
Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering
Authors
Keywords
-
Journal
SOLID STATE COMMUNICATIONS
Volume 150, Issue 39-40, Pages 1919-1922
Publisher
Elsevier BV
Online
2010-07-25
DOI
10.1016/j.ssc.2010.07.032

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