Compact artificial neuron based on anti-ferroelectric transistor

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

(2022) Mario Lanza et al.   SCIENCE

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

(2021) Yesheng Li et al.   Nature Electronics

Ferroelectric field-effect transistors based on HfO2: a review

(2021) Halid Mulaosmanovic et al.   NANOTECHNOLOGY

A comprehensive review on emerging artificial neuromorphic devices

(2020) Jiadi Zhu et al.   Applied Physics Reviews

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Temporal Backpropagation for Spiking Neural Networks with One Spike per Neuron

(2020) Saeed Reza Kheradpisheh et al.   International Journal of Neural Systems

Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges

(2020) Sourav Dutta et al.   Frontiers in Neuroscience

Intrinsic plasticity of silicon nanowire neurotransistors for dynamic memory and learning functions

(2020) Eunhye Baek et al.   Nature Electronics

Neuro-inspired computing chips

(2020) Wenqiang Zhang et al.   Nature Electronics

A Habituation Sensory Nervous System with Memristors

(2020) Zuheng Wu et al.   ADVANCED MATERIALS

High‐Uniformity Threshold Switching HfO 2 ‐Based Selectors with Patterned Ag Nanodots

(2020) Yujia Li et al.   Advanced Science

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

A high-speed MIM resistive memory cell with an inherent vanadium selector

(2020) Chih-Yang Lin et al.   Applied Materials Today

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

(2019) Donguk Lee et al.   Advanced Electronic Materials

Computational phase-change memory: Beyond von Neumann computing

(2019) Abu Sebastian et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors

(2019) Benjamin Grisafe et al.   IEEE ELECTRON DEVICE LETTERS

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

(2019) Ao Chen et al.   Advanced Electronic Materials

An Artificial Neuron Based on a Threshold Switching Memristor

(2018) Xumeng Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

(2018) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

A self-resetting spiking phase-change neuron

(2018) R A Cobley et al.   NANOTECHNOLOGY

Capacitive neural network with neuro-transistors

(2018) Zhongrui Wang et al.   Nature Communications

Biological plausibility and stochasticity in scalable VO2 active memristor neurons

(2018) Wei Yi et al.   Nature Communications

Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

(2017) Jeonghwan Song et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

(2017) Ilias Sourikopoulos et al.   Frontiers in Neuroscience

Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

(2016) Minkook Kang et al.   APPLIED PHYSICS LETTERS

Mastering the game of Go with deep neural networks and tree search

(2016) David Silver et al.   NATURE

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons

(2016) Abhronil Sengupta et al.   Scientific Reports

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

(2015) Jeonghwan Song et al.   IEEE ELECTRON DEVICE LETTERS

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

(2015) Adrien F. Vincent et al.   IEEE Transactions on Biomedical Circuits and Systems

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

(2015) Wang Kang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

(2014) Xihong Hao et al.   PROGRESS IN MATERIALS SCIENCE

A million spiking-neuron integrated circuit with a scalable communication network and interface

(2014) P. A. Merolla et al.   SCIENCE

Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices

(2012) C. David Wright et al.   ADVANCED FUNCTIONAL MATERIALS

Scalability and Design-Space Analysis of a 1T-1MTJ Memory Cell for STT-RAMs

(2012) Richard Dorrance et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

A scalable neuristor built with Mott memristors

(2012) Matthew D. Pickett et al.   NATURE MATERIALS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

High-Strain Lead-free Antiferroelectric Electrostrictors

(2009) Shan-Tao Zhang et al.   ADVANCED MATERIALS