Journal
ADVANCED SCIENCE
Volume 7, Issue 22, Pages -Publisher
WILEY
DOI: 10.1002/advs.202002251
Keywords
Ag nanodots; high-uniformity; selectors; threshold switching
Categories
Funding
- China Key Research and Development Program [2019YFB2205403]
- National Natural Science Foundation of China [61851404, 91964104, 61974081]
- Beijing Municipal Science and Technology Project [Z191100007519008]
Ask authors/readers for more resources
High-performance selector devices are essential for emerging nonvolatile memories to implement high-density memory storage and large-scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high-uniformity threshold switching HfO2-based selectors are fabricated by using e-beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross-point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10(8)), high endurance (>10(8)cycles), and fast switching speed (approximate to 75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO(2)and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle-to-cycle and device-to-device variations (C-V< 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one-selector-one-resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high-uniformity Ag NDs selectors offer great potential in the fabrication of large-scale 1S1R crossbar arrays for future memory and neuromorphic computing applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available