Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

(2020) Yang Zhang et al.   Applied Physics Reviews

A comprehensive review on emerging artificial neuromorphic devices

(2020) Jiadi Zhu et al.   Applied Physics Reviews

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Vertically Aligned WS 2 Layers for High‐Performing Memristors and Artificial Synapses

(2019) Mohit Kumar et al.   Advanced Electronic Materials

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe 2 /Pyramid Si Heterojunction

(2019) Feng‐Xia Liang et al.   Small

A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

(2019) Xuewei Feng et al.   Advanced Electronic Materials

Memristive Synapses and Neurons for Bioinspired Computing

(2019) Rui Yang et al.   Advanced Electronic Materials

Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories

(2019) Pingping Zhuang et al.   Advanced Electronic Materials

Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing

(2019) Xiaobing Yan et al.   ACS Applied Materials & Interfaces

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

(2018) Xiaolong Zhao et al.   ADVANCED MATERIALS

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

(2018) Shinhyun Choi et al.   NATURE MATERIALS

Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires

(2018) Sebastian Zuluaga et al.   2D Materials

Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

(2018) Fei Hui et al.   2D Materials

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

(2018) Ravi Prakash et al.   CURRENT APPLIED PHYSICS

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

(2017) Akinola D. Oyedele et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Novel Pd2Se3 Two-Dimensional Phase Driven by Interlayer Fusion in Layered PdSe2

(2017) Junhao Lin et al.   PHYSICAL REVIEW LETTERS

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

(2017) Yu Li et al.   Small

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

(2016) Jihang Lee et al.   ACS Nano

Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

(2016) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

(2016) Thuc Hue Ly et al.   Nature Communications

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments

(2011) Fei Zhuge et al.   NANOTECHNOLOGY

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY