Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Published 2013 View Full Article

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Title
Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 9R, Pages 096504
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.50.096504

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