The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors
出版年份 2016 全文链接
标题
The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors
作者
关键词
In-Ga-Zn-O (IGZO), Thin film transistor, Negative bias stress (NBS), Positive bias stress (PBS), Negative bias illumination stress (NBIS), Positive bias illumination stress (PBIS)
出版物
JOURNAL OF ELECTROCERAMICS
Volume 36, Issue 1-4, Pages 129-134
出版商
Springer Nature
发表日期
2016-04-02
DOI
10.1007/s10832-016-0022-5
参考文献
相关参考文献
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