Impact of Annealing on Contact Formation and Stability of IGZO TFTs
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Title
Impact of Annealing on Contact Formation and Stability of IGZO TFTs
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 3, Issue 9, Pages Q3032-Q3034
Publisher
The Electrochemical Society
Online
2014-07-20
DOI
10.1149/2.006409jss
References
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Related references
Note: Only part of the references are listed.- Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors
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- Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
- (2011) Keisuke Ide et al. APPLIED PHYSICS LETTERS
- Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors
- (2011) Edward Namkyu Cho et al. CURRENT APPLIED PHYSICS
- Review paper: Transparent amorphous oxide semiconductor thin film transistor
- (2011) Jang-Yeon Kwon et al. Electronic Materials Letters
- A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load
- (2011) Man Ju Seok et al. IEEE ELECTRON DEVICE LETTERS
- The Effect of Annealing Ambient on the Characteristics of an Indium–Gallium–Zinc Oxide Thin Film Transistor
- (2011) Soyeon Park et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
- (2011) Chur-Shyang Fuh et al. THIN SOLID FILMS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors
- (2010) Woong-Sun Kim et al. THIN SOLID FILMS
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
- (2009) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors
- (2009) Tze-Ching Fung et al. JOURNAL OF APPLIED PHYSICS
- Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
- (2009) Yutomo Kikuchi et al. THIN SOLID FILMS
- Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
- (2008) Jong H. Na et al. APPLIED PHYSICS LETTERS
- Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
- (2008) Jaechul Park et al. IEEE ELECTRON DEVICE LETTERS
- Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
- (2008) Pedro Barquinha et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes
- (2007) Yasuhiro Shimura et al. THIN SOLID FILMS
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