Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

(2021) A.A. Lebedev et al.   RADIATION PHYSICS AND CHEMISTRY

Radiation Defects Created in n ‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

(2019) Pavel Hazdra et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

(2019) O. M. Korolkov et al.   SEMICONDUCTORS

SiC based electronics

(2018) Alexander A. Lebedev et al.   PHYSICS-USPEKHI

Application of SiC power electronic devices in secondary power source for aircraft

(2017) Qian Xun et al.   RENEWABLE & SUSTAINABLE ENERGY REVIEWS

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

(2015) Jan Vobecky et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

(2015) E. Omotoso et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation

(2011) Hiromi Kaneko et al.   APPLIED PHYSICS LETTERS