Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes

(2020) V. V. Kozlovski et al.   TECHNICAL PHYSICS LETTERS

Radiation Defects Created in n ‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

(2019) Pavel Hazdra et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

(2015) E. Omotoso et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

(2014) Koutarou Kawahara et al.   JOURNAL OF APPLIED PHYSICS

Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

(2014) V. V. Kozlovski et al.   SEMICONDUCTORS

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

(2014) Eugenia I. Shabunina et al.   SOLID-STATE ELECTRONICS

Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation

(2011) Hiromi Kaneko et al.   APPLIED PHYSICS LETTERS