The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Published 2015 View Full Article

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Title
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
Authors
Keywords
Richardson constant, High energy electron irradiation, Silicon carbide, Schottky barrier height
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 39, Issue -, Pages 112-118
Publisher
Elsevier BV
Online
2015-05-19
DOI
10.1016/j.mssp.2015.04.031

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