Radiation Defects Created in n ‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

(2018) Ivana Capan et al.   JOURNAL OF APPLIED PHYSICS

A study of the effect of electron and proton irradiation on 4H-SiC device structures

(2017) A. A. Lebedev et al.   TECHNICAL PHYSICS LETTERS

Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

(2016) A. T. Paradzah et al.   JOURNAL OF ELECTRONIC MATERIALS

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

(2015) Jan Vobecky et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

(2015) Mietek Bakowski et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

(2013) G. Alfieri et al.   APPLIED PHYSICS LETTERS

Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5MeV and 15MeV

(2013) Roxana Radu et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Negative-USystem of Carbon Vacancy in4H-SiC

(2012) N. T. Son et al.   PHYSICAL REVIEW LETTERS

NIEL Scaling: Comparison With Measured Defect Introduction Rate in Silicon

(2011) Pierre Arnolda et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

(2008) G. Izzo et al.   JOURNAL OF APPLIED PHYSICS