Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

Published 2019 View Full Article

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Title
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons
Authors
Keywords
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Journal
SEMICONDUCTORS
Volume 53, Issue 7, Pages 975-978
Publisher
Pleiades Publishing Ltd
Online
2019-07-02
DOI
10.1134/s1063782619070133
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