Leakage current in high dielectric oxides: Role of defect-induced energies

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

(2011) L. Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

(2011) Hyuk-Min Kwon et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Reliability of thin ZrO2 gate dielectric layers

(2011) Robert O’Connor et al.   MICROELECTRONICS RELIABILITY

Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo

(2010) Gunther Jegert et al.   APPLIED PHYSICS LETTERS

Permittivity Enhanced Atomic Layer Deposited HfO2Thin Films Manipulated by a Rutile TiO2Interlayer

(2010) Minha Seo et al.   CHEMISTRY OF MATERIALS

Limitations of Poole–Frenkel Conduction in Bilayer $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ MOS Devices

(2010) Richard G. Southwick et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective

(2010) C. S. Park et al.   International Journal of Materials Research

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

(2010) M. Lukosius et al.   THIN SOLID FILMS

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Insulators

(2009) S.H. Lin et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

(2009) S. Monaghan et al.   IEEE ELECTRON DEVICE LETTERS

Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

(2009) F. El Kamel et al.   JOURNAL OF APPLIED PHYSICS

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

(2009) W. Weinreich et al.   MICROELECTRONIC ENGINEERING

Conduction mechanism of leakage current due to the traps in ZrO2thin film

(2009) Yohan Seo et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

(2008) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS