Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

Space-charge-controlled field emission model of current conduction through Al2O3 films

(2016)   JOURNAL OF APPLIED PHYSICS

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries

(2015) Elena O. Filatova et al.   Journal of Physical Chemistry C

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

(2013) R. V. Galatage et al.   APPLIED PHYSICS LETTERS

Accuracy assessment of sheet-charge approximation for Fowler-Nordheim tunneling into charged insulators

(2013)   JOURNAL OF APPLIED PHYSICS

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

(2012) G. Dingemans et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

(2012) Oihane Beldarrain et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure

(2011) Moataz Bellah M. Mousa et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

(2010) Xiaolei Wang et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS