Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Unravelling the Nature of Unipolar Resistance Switching in Organic Devices by Utilizing the Photovoltaic Effect

(2014) Sebastian Nau et al.   ADVANCED MATERIALS

Observation of negative differential resistance and electrical bi-stability in chemically synthesized ZnO nanorods

(2014) Nandini Roy et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

(2014) Yuchao Yang et al.   Nature Communications

Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots

(2013) Chee Huei Lee et al.   ADVANCED MATERIALS

Tunable Electroluminescence in Planar Graphene/SiO2Memristors

(2013) Congli He et al.   ADVANCED MATERIALS

Effects of anode materials on resistive characteristics of NiO thin films

(2013) Ze Jia et al.   APPLIED PHYSICS LETTERS

Insertion of a Si layer to reduce operation current for resistive random access memory applications

(2013) Yu-Ting Chen et al.   APPLIED PHYSICS LETTERS

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Novel Ion Bombardment Technique for Doping Limited Cu Source in ${\rm SiO}_{x}$-Based Nonvolatile Switching Layer

(2013) Sheng-Hsien Liu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

(2013) G. S. Tang et al.   JOURNAL OF APPLIED PHYSICS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

(2012) Yen-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device

(2012) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

(2012) V. Mikhelashvili et al.   JOURNAL OF APPLIED PHYSICS

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

(2012) Woon Ik Park et al.   NANO LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Negative differential resistance of a metal–insulator–metal device with gold nanoparticles embedded in polydimethylsiloxane

(2012) Mengying Xie et al.   SOLID STATE COMMUNICATIONS

In situ imaging of the conducting filament in a silicon oxide resistive switch

(2012) Jun Yao et al.   Scientific Reports

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

(2011) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

(2010) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

(2010) Y. C. Yang et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

(2009) S. H. Phark et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier

(2009) Jea-Gun Park et al.   NANO LETTERS

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS