Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

Frequency-Modulated Charge Pumping With Extremely High Gate Leakage

(2015) Jason Thomas Ryan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

$1/f$ Noise and Defects in Microelectronic Materials and Devices

(2015) D. M. Fleetwood   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO2/Si nanofilms

(2015) Pierre Giovanni Mani-Gonzalez et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Electronic and magnetic properties of the cation vacancy defect inm−HfO2

(2015) Keith P. McKenna et al.   PHYSICAL REVIEW B

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent \(V_{\rm TH}\) Variability

(2014) Maria Toledano-Luque et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

(2013) Kalya Shubhakar et al.   MICROELECTRONIC ENGINEERING

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

(2013) R. Foissac et al.   MICROELECTRONICS RELIABILITY

Interface layer in hafnia/Si films as a function of ALD cycles

(2012) Pierre-Giovanni Mani-Gonzalez et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Bimodal Weibull Distribution of Metal/High-$\kappa$ Gate Stack TDDB—Insights by Scanning Tunneling Microscopy

(2011) K. S. Yew et al.   IEEE ELECTRON DEVICE LETTERS

Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric

(2011) K. S. Yew et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

(2011) Tibor Grasser   MICROELECTRONICS RELIABILITY

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories

(2010) Chia-Han Yang et al.   APPLIED PHYSICS LETTERS

Role of oxygen vacancies in HfO2-based gate stack breakdown

(2010) X. Wu et al.   APPLIED PHYSICS LETTERS

Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

(2009) Eun-Ae Choi et al.   APPLIED PHYSICS LETTERS

The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach

(2008) Steve S. Chung et al.   APPLIED PHYSICS LETTERS