Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

Published 2009 View Full Article

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Title
Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages 122901
Publisher
AIP Publishing
Online
2009-03-24
DOI
10.1063/1.3106643
References
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