Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Published 2013 View Full Article

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Title
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 109, Issue -, Pages 364-369
Publisher
Elsevier BV
Online
2013-03-16
DOI
10.1016/j.mee.2013.03.021

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