Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure

(2017) Hengsheng Shan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

(2016) M. J. Davies et al.   JOURNAL OF APPLIED PHYSICS

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

(2015) S. Hammersley et al.   APPLIED PHYSICS LETTERS

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

(2014) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

(2014) F. C.-P. Massabuau et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

(2014) Matthew J. Davies et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

(2013) R. A. Oliver et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

(2010) Colin-N. Brosseau et al.   PHYSICAL REVIEW B

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

(2008) P.T. Törmä et al.   JOURNAL OF CRYSTAL GROWTH