Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K

A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications

(2019) Xiantao Jia et al.   Materials Research Express

Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure

(2019) Yangfeng Li et al.   JOURNAL OF APPLIED PHYSICS

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

(2019) Abbas Sabbar et al.   Scientific Reports

Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars

(2018) Xinglian Xu et al.   JOURNAL OF LUMINESCENCE

Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor

(2017) Xiaoli Wang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

High-flux focusable color-tunable and efficient white-light-emitting diode light engine for stage lighting

(2016) Maumita Chakrabarti et al.   OPTICAL ENGINEERING

In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit

(2015) Jiaming Li et al.   IEEE ELECTRON DEVICE LETTERS

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

(2015) W. Liu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

Current density impact on the emission behavior of GaN-based blue emitting LEDs in the temperature range of 4.2-400 K

(2014) Reinhold Hetzel et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes

(2013) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

(2013) J. Binder et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs With Different Quantum Barrier Thickness

(2012) C. K. Wang et al.   Journal of Display Technology

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

(2012) Huining Wang et al.   OPTICS EXPRESS

Dynamic Photoelectrothermal Theory for Light-Emitting Diode Systems

(2011) Xuehui Tao et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

(2011) Jen-Cheng Wang et al.   JOURNAL OF LUMINESCENCE

White-Light-Emitting Diodes with Quantum Dot Color Converters for Display Backlights

(2010) Eunjoo Jang et al.   ADVANCED MATERIALS

Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire

(2009) Shih-Chun Ling et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

High power light-emitting diode junction temperature determination from current-voltage characteristics

(2008) A. Keppens et al.   JOURNAL OF APPLIED PHYSICS

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers

(2008) B. Arnaudov et al.   MICROELECTRONICS JOURNAL

Recombination of free and bound excitons in GaN

(2008) B. Monemar et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS