Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique
出版年份 2022 全文链接
标题
Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique
作者
关键词
Laser MBE, InGaN/GaN MQW, Blue LED, p-GaN, n-GaN
出版物
OPTICAL MATERIALS
Volume 126, Issue -, Pages 112149
出版商
Elsevier BV
发表日期
2022-03-01
DOI
10.1016/j.optmat.2022.112149
参考文献
相关参考文献
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