Intensive measures of luminescence in GaN/InGaN heterostructures

Self-sensing of temperature rises on light emitting diode based optrodes

(2018) Fahimeh Dehkhoda et al.   Journal of Neural Engineering

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

(2017) Changfu Li et al.   Scientific Reports

Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

(2015) Waylin J. Wing et al.   JOURNAL OF APPLIED PHYSICS

Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

(2015) Jui-Ju Hsiao et al.   JOURNAL OF LUMINESCENCE

Phonon lifetime in SiSn and its suitability for hot-carrier solar cells

(2014) Hugo Levard et al.   APPLIED PHYSICS LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Precisely Timing Dissipative Quantum Information Processing

(2013) M. J. Kastoryano et al.   PHYSICAL REVIEW LETTERS

Difference between photoluminescence and electroluminescence of excimer-based platinum [1, 3-difluoro-4,6-di(2-pyridinyl) benzene]chloride

(2011) Hong Xu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction

(2010) Jiunn-Chyi Lee et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Modeling high power light-emitting diode spectra and their variation with junction temperature

(2010) A. Keppens et al.   JOURNAL OF APPLIED PHYSICS

Single-molecule identification via electric current noise

(2010) Makusu Tsutsui et al.   Nature Communications

High power light-emitting diode junction temperature determination from current-voltage characteristics

(2008) A. Keppens et al.   JOURNAL OF APPLIED PHYSICS