Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire

(2021) Riena Jinno et al.   Science Advances

Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

(2021) A F M Anhar Uddin Bhuiyan et al.   APL Materials

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

(2020) Jiaye Zhang et al.   APL Materials

Deep-level defects in gallium oxide

(2020) Zhengpeng Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

(2020) Dangpo Wang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

(2019) Chao Xie et al.   ADVANCED FUNCTIONAL MATERIALS

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

(2019) Xuanhu Chen et al.   Photonics Research

Si and Sn doping of ε-Ga2O3 layers

(2019) A. Parisini et al.   APL Materials

Materials issues and devices of α- and β-Ga2O3

(2019) Elaheh Ahmadi et al.   JOURNAL OF APPLIED PHYSICS

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

(2019) Jared M. Johnson et al.   Physical Review X

Electrical Properties of Sn‐Doped α‐Ga 2 O 3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

(2019) Kazuaki Akaiwa et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

(2018) Haiding Sun et al.   CRYSTAL GROWTH & DESIGN

AlGaN photonics: recent advances in materials and ultraviolet devices

(2018) Dabing Li et al.   Advances in Optics and Photonics

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

(2018) Yao Yao et al.   Materials Research Letters

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

(2018) Y. Arata et al.   CRYSTENGCOMM

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

(2018) HuiWen Xue et al.   Nanoscale Research Letters

Anisotropic Optical Properties of Metastable (011¯2)α−Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy

(2018) M. Kracht et al.   Physical Review Applied

Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions

(2018) Linpeng Dong et al.   COMPUTATIONAL MATERIALS SCIENCE

Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films

(2018) Hiroyuki Nishinaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Tin-assisted growth of ε-Ga2O3 film and the fabrication of photodetectors on sapphire substrate by PLD

(2018) Yuncong Cai et al.   Optical Materials Express

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

(2018) M. Kneiß et al.   APL Materials

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

(2018) J. H. Leach et al.   APL Materials

Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy

(2017) M. Kracht et al.   Physical Review Applied

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates

(2016) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical, optical, and magnetic properties of Sn doped α-Ga2O3 thin films

(2016) E. Chikoidze et al.   JOURNAL OF APPLIED PHYSICS

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

(2016) R. J. Kaplar et al.   ECS Journal of Solid State Science and Technology

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

(2015) S. C. Siah et al.   APPLIED PHYSICS LETTERS

Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)

(2014) Robert Schewski et al.   Applied Physics Express

Creation of Nanoparticle–Nanotube Conjugates for Life-Science Application Using Gas–Liquid Interfacial Plasmas

(2013) Toshiro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structural and electronic properties of cubic HfO2 surfaces

(2008) G.H. Chen et al.   COMPUTATIONAL MATERIALS SCIENCE