Probing the electrical transport properties of intrinsic InN nanowires

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride

(2012) Shulong Wang et al.   APPLIED PHYSICS LETTERS

Charge transport and trap characterization in individual GaSb nanowires

(2012) Wei Xu et al.   JOURNAL OF APPLIED PHYSICS

InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings

(2012) Senem Aydogu et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Tuning the Surface Charge Properties of Epitaxial InN Nanowires

(2012) S. Zhao et al.   NANO LETTERS

Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study

(2012) S Zhao et al.   NANOTECHNOLOGY

The role of extended defects on the performance of optoelectronic devices in nitride semiconductors

(2012) Theodore D. Moustakas   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

(2012) S. Zhao et al.   PHYSICAL REVIEW B

Rectifying characteristics of Te-doped GaAs nanowires

(2011) O. Salehzadeh et al.   APPLIED PHYSICS LETTERS

Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

(2011) B. S. Simpkins et al.   JOURNAL OF APPLIED PHYSICS

InN p-i-n Nanowire Solar Cells on Si

(2010) Hieu Pham Trung Nguyen et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Observation of Space-Charge-Limited Transport in InAs Nanowires

(2010) A M Katzenmeyer et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

(2010) J. Segura-Ruiz et al.   PHYSICAL REVIEW B

Transport characterization in nanowires using an electrical nanoprobe

(2010) A A Talin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low-field and high-field electron transport in zinc blende InN

(2009) V. M. Polyakov et al.   APPLIED PHYSICS LETTERS

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

(2009) M. E. Holtz et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Electrical transport properties of single undoped and n-type doped InN nanowires

(2009) T Richter et al.   NANOTECHNOLOGY

Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)

(2009) Yi-Lu Chang et al.   NANOTECHNOLOGY

Defect complexes and cluster doping of InN: First-principles investigations

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

Unusually Strong Space-Charge-Limited Current in Thin Wires

(2008) A. Alec Talin et al.   PHYSICAL REVIEW LETTERS

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS

Transport Coefficients of InAs Nanowires as a Function of Diameter

(2008) Shadi A. Dayeh et al.   Small