Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

(2021) Massimo Zimbone et al.   ACTA MATERIALIA

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

(2020) Filippo Giannazzo et al.   Advanced Electronic Materials

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

(2020) Viviana Scuderi et al.   Materials

3C-SiC grown on Si by using a Si1-xGex buffer layer

(2019) M. Zimbone et al.   JOURNAL OF CRYSTAL GROWTH

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

(2019) Massimo Zimbone et al.   Materials

Carrier-storage-enhanced superjunction IGBT with n-Si and p-3C-SiC pillars

(2019) Rui Li et al.   ELECTRONICS LETTERS

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

(2018) F. La Via et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Thermal etching of SiC

(2012) N.G. van der Berg et al.   APPLIED SURFACE SCIENCE

Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping

(2012) Kun Wang et al.   JOURNAL OF APPLIED PHYSICS

Ab initio density functional theory calculation of stacking fault energy and stress in 3C-SiC

(2012) Yoshitaka Umeno et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Evidence of electrical activity of extended defects in 3C–SiC grown on Si

(2010) X. Song et al.   APPLIED PHYSICS LETTERS

Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si

(2009) A. Severino et al.   APPLIED PHYSICS LETTERS

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

(2008) M. Zielinski et al.   JOURNAL OF CRYSTAL GROWTH

Highly doped p-type 3C–SiC on 6H–SiC substrates

(2008) A A Lebedev et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY