Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3383233
Keywords
electrical resistivity; extended defects; scanning-transmission electron microscopy; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors
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In this paper, we demonstrate the high electrical activity of extended defects found in 3C-SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistance microscopy aimed to study their electrical behavior. Using this technique, complete layer resistance cartography was done. The electrical activity of the extended defects in 3C-SiC was clearly evidenced. Furthermore, the defect activity was estimated to be higher than that of heavily nitrogen doped (5x10(18) cm(-3)) 3C-SiC layer.
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