Highly doped p-type 3C-SiC on 6H-SiC substrates

Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at similar to E(V) + 0.25 eV and at E(V) + 0.06 - 0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C-SiC devices.