Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping

Title
Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 3, Pages 033508
Publisher
AIP Publishing
Online
2012-08-05
DOI
10.1063/1.4742016

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