Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 3, Pages 2247-2252Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2019.2938769
Keywords
Lateral GaN Schottky barrier diode (SBD); rectifier circuit; wireless power transfer (WPT)
Categories
Funding
- National Key Research and Development Program [2016YFB0400100]
- National Key Science and Technology Special Project [2017ZX01001301]
- National Natural Science Foundation of China [11435010, 61474086]
- Natural Science Basic Research Program of Shaanxi [2016ZDJC-02]
- State Key Laboratory on Integrated Optoelectronics [IOSKL2018KF04]
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In this letter, we propose to implement a microwave lateral GaN Schottky barrier diode (SBD) in a designed 5.8-GHz rectifier circuit for future high-power and high-efficiency wireless power transfer. The low-pressure chemical vapor deposition SiN-passivated lateral GaN SBD demonstrates a low turn-on voltage of 0.38 V, a low on-resistance of 4.5 , a low junction capacitance of 0.32 pF at 0-V bias, and a high breakdown voltage of 164 V, which are essentials for a high-efficiency and high-power rectifying application. By incorporating this lateral GaN SBD in a well-designed 5.8-GHz rectifier circuit, an unprecedented combination of high efficiency and high power is achieved simultaneously. The rectifier circuit demonstrates a high RFdc conversion efficiency ((RFDC)) of 71 4.5 with an input power (P-in) of 2.5 W and (RFDC) 50 4.5 with P-in 6.4 W per single diode, showing the great promise of embracing lateral GaN SBD for future wireless high-power transfer application.
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