Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 29, Issue 6, Pages 2634-2637Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2284248
Keywords
Efficiency; GaN; high frequency; high voltage; power device; semiconductor; wide band gap
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kV-class GaN high electron mobility transistors built on low-cost Si substrate have been developed with proven switching performance. These devices show a blocking voltage >1200 V, low on-resistance <0.19 Omega, and high switching speed >200 V/ns. A 3-kW 400 V:800 V hard-switched boost converter based on the GaN transistor achieves 99% efficiency at 100 kHz, well exceeding that of other competing semiconductors.
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