Journal
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
Volume 67, Issue 8, Pages 6597-6606Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2019.2939968
Keywords
Conversion efficiency; gallium nitride (GaN); rectifier circuit; Schottky barrier diode (SBD); wireless power transfer (WPT)
Categories
Funding
- National Key Research and Development Program [2016YFB0400100]
- National Key Science & Technology Special Project [2017ZX01001301]
- National Natural Science Foundation of China [11435010, 61474086]
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In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility, and saturation velocity of the gallium nitride (GaN) two-dimensional electron gas, engineered lateral GaN SBD with low turn-on voltage (V-on) of 0.47 V, on-resistance (R-on) of 4 omega, breakdown voltage of 170 V, and junction capacitance $(C_{j})$ of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high-performance GaN SBD into the optimized rectifier circuit, high radio frequency (RF)/dc conversion efficiency of 79% is achieved, and the input power of per single GaN SBD is increased by 10X when compared with that of a commercially available silicon (Si) SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 light emitting diodes lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy-harvesting technique for future WPT application.
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