High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

(2018) Yachao Zhang et al.   MATERIALS RESEARCH BULLETIN

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

(2018) Yachao Zhang et al.   Applied Physics Express

Superior transport properties of InGaN channel heterostructure with high channel electron mobility

(2016) Yachao Zhang et al.   Applied Physics Express

Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

(2015) Yachao Zhang et al.   APPLIED PHYSICS LETTERS

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

(2013) Qi Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

(2012) JunShuai Xue et al.   APPLIED PHYSICS LETTERS

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

(2012) O. Laboutin et al.   APPLIED PHYSICS LETTERS

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

(2012) A. Kamath et al.   IEEE ELECTRON DEVICE LETTERS

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

(2012) Xiao-Dong Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

(2010) Maojun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES