Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Model of Electron Population and Energy Band Diagram of Multiple-Channel GaN Heterostructures

(2021) Xing Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

(2021) P Sohi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Multi-channel nanowire devices for efficient power conversion

(2021) L. Nela et al.   Nature Electronics

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

(2021) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V

(2021) Ang Li et al.   SUPERLATTICES AND MICROSTRUCTURES

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

(2020) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

(2018) Jin Wei et al.   IEEE ELECTRON DEVICE LETTERS

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

(2018) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

(2015) Jin Wei et al.   IEEE ELECTRON DEVICE LETTERS

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

(2013) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

(2013) Y.-F. Wu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

(2013) S. S. Kushvaha et al.   AIP Advances

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

(2010) J. Song et al.   APPLIED PHYSICS LETTERS

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(2010) Yu Cao et al.   JOURNAL OF CRYSTAL GROWTH

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

(2009) N. Sarazin et al.   IEEE ELECTRON DEVICE LETTERS