Wafer‐Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy‐Efficient Neural Network Hardware

Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing

(2021) Xuewei Feng et al.   ACS Nano

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

(2021) Sifan Li et al.   npj 2D Materials and Applications

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

(2021) Yesheng Li et al.   Nature Electronics

Fully hardware-implemented memristor convolutional neural network

(2020) Peng Yao et al.   NATURE

Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices

(2020) Fang Liu et al.   SCIENCE

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

(2020) Pengfei Yang et al.   ACS Nano

Universal mechanical exfoliation of large-area 2D crystals

(2020) Yuan Huang et al.   Nature Communications

Anomalous Conductivity Switch Observed in Treated Hafnium Diselenide Transistors

(2020) Malak Albagami et al.   Advanced Electronic Materials

Alloying conducting channels for reliable neuromorphic computing

(2020) Hanwool Yeon et al.   Nature Nanotechnology

Two-dimensional materials for next-generation computing technologies

(2020) Chunsen Liu et al.   Nature Nanotechnology

Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

(2020) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

(2020) Woong Huh et al.   ADVANCED MATERIALS

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

(2020) Shaochuan Chen et al.   Nature Electronics

Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors

(2020) Panpan Zhang et al.   APPLIED PHYSICS LETTERS

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

(2020) Bin Yuan et al.   Advanced Electronic Materials

Laser-writable high-k dielectric for van der Waals nanoelectronics

(2019) N. Peimyoo et al.   Science Advances

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

(2019) Renjing Xu et al.   NANO LETTERS

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Self-selective van der Waals heterostructures for large scale memory array

(2019) Linfeng Sun et al.   Nature Communications

Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS 2 by Chemical Vapor Deposition

(2019) Lin Wang et al.   Advanced Electronic Materials

A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

(2019) Xuewei Feng et al.   Advanced Electronic Materials

Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories

(2019) Pingping Zhuang et al.   Advanced Electronic Materials

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

(2019) Jakub Jadwiszczak et al.   ACS Nano

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures

(2018) Woong Huh et al.   ADVANCED MATERIALS

Memristor-Based Analog Computation and Neural Network Classification with a Dot Product Engine

(2018) Miao Hu et al.   ADVANCED MATERIALS

NeuroSim: A Circuit-Level Macro Model for Benchmarking Neuro-Inspired Architectures in Online Learning

(2018) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

(2018) Shinhyun Choi et al.   NATURE MATERIALS

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

(2018) Hsu-Sheng Tsai et al.   Advanced Materials Interfaces

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

(2018) Feng Zhang et al.   NATURE MATERIALS

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

(2018) Xiaojian Zhu et al.   NATURE MATERIALS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

(2016) Gioele Mirabelli et al.   JOURNAL OF APPLIED PHYSICS

Reflection high-energy electron diffraction measurements of reciprocal space structure of 2D materials

(2016) Y Xiang et al.   NANOTECHNOLOGY

Structural Phase Transition Effect on Resistive Switching Behavior of MoS2-Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices

(2016) Peng Zhang et al.   Small

Vertically oriented few-layered HfS2nanosheets: growth mechanism and optical properties

(2016) Binjie Zheng et al.   2D Materials

Exascale computing and big data

(2015) Daniel A. Reed et al.   COMMUNICATIONS OF THE ACM

Programming Protocol Optimization for Analog Weight Tuning in Resistive Memories

(2015) Ligang Gao et al.   IEEE ELECTRON DEVICE LETTERS

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

(2014) Ruoyu Yue et al.   ACS Nano

Layered memristive and memcapacitive switches for printable electronics

(2014) Alexander A. Bessonov et al.   NATURE MATERIALS

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE

(2013) Sahng-Kyoon Jerng et al.   Nanoscale

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Influence of copper intercalation on the resistive state of compounds in the Cu-HfSe2 system

(2012) V. G. Pleshchev et al.   PHYSICS OF THE SOLID STATE

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

(2012) Juqing Liu et al.   Small

Toward Clean and Crackless Transfer of Graphene

(2011) Xuelei Liang et al.   ACS Nano

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

(2009) Xuesong Li et al.   NANO LETTERS

Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates

(2008) Alfonso Reina et al.   Journal of Physical Chemistry C