Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS 2 by Chemical Vapor Deposition

(2019) Lin Wang et al.   Advanced Electronic Materials

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS 2 : From Thermally Activated to Variable‐Range Hopping

(2019) Songang Peng et al.   Advanced Electronic Materials

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

(2019) Jakub Jadwiszczak et al.   ACS Nano

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

(2018) Kirby K. H. Smithe et al.   NANO LETTERS

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation

(2018) Da Li et al.   ACS Nano

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor

(2018) I. Vladimirov et al.   Scientific Reports

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

(2015) Herbert Schroeder   JOURNAL OF APPLIED PHYSICS

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

(2015) G. He et al.   NANO LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

(2014) Wenjuan Zhu et al.   Nature Communications

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers

(2013) Elton J. G. Santos et al.   ACS Nano

Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

(2013) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation

(2013) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Hopping transport through defect-induced localized states in molybdenum disulphide

(2013) Hao Qiu et al.   Nature Communications

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B