Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
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Title
Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
Authors
Keywords
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Journal
Nature Communications
Volume 12, Issue 1, Pages -
Publisher
Springer Science and Business Media LLC
Online
2021-05-18
DOI
10.1038/s41467-021-23184-y
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- (2018) Gary A. Gibson ADVANCED FUNCTIONAL MATERIALS
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- (2018) Ziwen Wang et al. APPLIED PHYSICS LETTERS
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- (2018) Shuai Li et al. NANOTECHNOLOGY
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- Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
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- (2017) Hao Jiang et al. Nature Communications
- An accurate locally active memristor model for S-type negative differential resistance in NbOx
- (2016) Gary A. Gibson et al. APPLIED PHYSICS LETTERS
- Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
- (2016) Simone Balatti et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Threshold switching and electrical self-oscillation in niobium oxide films
- (2016) Xinjun Liu et al. JOURNAL OF APPLIED PHYSICS
- Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
- (2016) Carsten Funck et al. Advanced Electronic Materials
- Thermally induced crystallization in NbO2 thin films
- (2016) Jiaming Zhang et al. Scientific Reports
- Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration
- (2015) Sanjoy Kumar Nandi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
- (2015) Simone Balatti et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Spin dice: A scalable truly random number generator based on spintronics
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- A scalable neuristor built with Mott memristors
- (2012) Matthew D. Pickett et al. NATURE MATERIALS
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